| 4英寸氮化鎵自支撐襯底 4-inch Free-standing GaN Substrates | ||
| 直徑 Dimension | 100 ± 0.5 mm | |
| 厚度 Thickness | 450 ± 30 μm | |
| 主參考邊 Orientation Flat | (1-100) ± 0.1o, 32 ± 1 mm | |
| 次參考邊 Secondary Frientation Flat | (11-20) ± 0.2o, 16 ± 1 mm | |
| 晶向Orientation： | C plane (0001) off angle toward M-axis 0.4±0.2° | |
| 總厚度變化 TTV | ≤ 30 μm | |
| 彎曲度 BOW | ≤ 40 μm | |
| 導(dǎo)電類型 Conduction Type | N-type （Un-doped） | N-type （Silicon-doped） |
| 電阻率Resistivity (300K) | < 0.2 Ω·cm | < 0.02 Ω·cm |
| 載流子濃度 Carrier Concentration | ＜5×1016 cm-3 | 1~2×1018 cm-3 |
| 鎵面粗糙度 Ga face surface roughness | < 0.3 nm (10×10μm) | |
| 氮面粗糙度 N face surface roughness | Etched （0.5 ~1.5 μm）；Polished（＜0.3nm） | |
| 邊緣 Edge | Beveled | |
| 位錯(cuò)密度 Dislocation density | <2×106 cm-2 | |
| (002) 面半峰寬 (002) FWHM | ≤100 arcsec | |
| (102) 面半峰寬 (102) FWHM | ≤100 arcsec | |
| 宏觀缺陷密度 Macro defect density (hole) | < 0.5 cm-2 | |
| 可用面積 Useable area | ＞90 % | |
| 包裝 Package | Packaged in individual containers in a class 100 clean room environment. | |
